? semiconductor components industries, llc, 2016 august, 2016 ? rev. 5 1 publication order number: ntljd3119c/d ntljd3119c power mosfet 20 v/ ? 20 v, 4.6 a/ ? 4.1 a, complementary, 2x2 mm, wdfn package features ? complementary n ? channel and p ? channel mosfet ? wdfn package with exposed drain pad for excellent thermal conduction ? footprint same as sc ? 88 package ? leading edge trench technology for low on resistance ? 1.8 v gate threshold voltage ? low profile (< 0.8 mm) for easy fit in thin environments ? this is a pb ? free device applications ? synchronous dc ? dc conversion circuits ? load/power management of portable devices like pda?s, cellular phones and hard drives ? color display and camera flash regulators maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage n ? ch v dss 20 v p ? ch ? 20 gate ? to ? source voltage n ? ch v gs 8.0 v p ? ch n ? channel continuous drain current (note 1) steady state t a = 25 c i d 3.8 a t a = 85 c 2.8 t 5 s t a = 25 c 4.6 p ? channel continuous drain current (note 1) steady state t a = 25 c i d ? 3.3 a t a = 85 c ? 2.4 t 5 s t a = 25 c ? 4.1 power dissipation (note 1) steady state t a = 25 c p d 1.5 w t 5 s 2.3 n ? channel continuous drain current (note 2) steady state t a = 25 c i d 2.6 a t a = 85 c 1.9 p ? channel continuous drain current (note 2) steady state t a = 25 c i d ? 2.3 a t a = 85 c ? 1.6 power dissipation (note 2) steady state t a = 25 c p d 0.71 w pulsed drain current n ? ch t p = 10 s i dm 18 a p ? ch ? 20 operating junction and storage temperature t j , t stg ? 55 to 150 c lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz cu. www. onsemi.com jm = specific device code m = date code = pb ? free package (note: microdot may be in either location) wdfn6 case 506an marking diagram device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. d2 d1 pin 1 1 2 3 6 5 4 s1 g1 d2 d1 g2 s2 (top view) pin connections d1 d2 ntljd3119ctag wdfn6 (pb ? free) 3000/tape & reel n ? channel 20 v p ? channel ? 20 v 85 m @ 2.5 v 65 m @ 4.5 v 100 m @ ? 4.5 v 135 m @ ? 2.5 v r ds(on) max 2.0 a ? 2.0 a i d max v (br)dss 120 m @ 1.8 v 200 m @ ? 1.8 v ntljd3119ctbg wdfn6 (pb ? free) 3000/tape & reel 3.8 a 1.7 a ? 4.1 a ? 1.6 a jm m 1
ntljd3119c www. onsemi.com 2 thermal resistance ratings parameter symbol max unit single operation (self ? heated) junction ? to ? ambient ? steady state (note 3) r ja 83 c/w junction ? to ? ambient ? steady state min pad (note 4) r ja 177 junction ? to ? ambient ? t 5 s (note 3) r ja 54 dual operation (equally heated) junction ? to ? ambient ? steady state (note 3) r ja 58 c/w junction ? to ? ambient ? steady state min pad (note 4) r ja 133 junction ? to ? ambient ? t 5 s (note 3) r ja 40 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size (30 mm 2 , 2 oz cu).
ntljd3119c www. onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol n/p test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 20 v p i d = ? 250 a ? 20 drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j n 10.4 mv/ c p 9.95 zero gate voltage drain current i dss n v gs = 0 v, v ds = 16 v t j = 25 c 1.0 a p v gs = 0 v, v ds = ? 16 v ? 1.0 n v gs = 0 v, v ds = 16 v t j = 85 c 10 p v gs = 0 v, v ds = ? 16 v ? 10 gate ? to ? source leakage current i gss n v ds = 0 v, v gs = 8.0 v 100 na p v ds = 0 v, v gs = 8.0 v 100 on characteristics (note 5) gate threshold voltage v gs(th) n v gs = v ds i d = 250 a 0.4 0.7 1.0 v p i d = ? 250 a ? 0.4 ? 0.7 ? 1.0 gate threshold temperature coefficient v gs(th) /t j n ? 3.0 mv/ c p 2.44 drain ? to ? source on resistance r ds(on) n v gs = 4.5 v , i d = 3.8 a 37 65 m p v gs = ? 4.5 v , i d = ? 4.1 a 75 100 n v gs = 2.5 v , i d = 2.0 a 46 85 p v gs = ? 2.5 v, i d = ? 2.0 a 101 135 n v gs = 1.8 v , i d = 1.7 a 65 120 p v gs = ? 1.8 v, i d = ? 1.6 a 150 200 forward transconductance g fs n v ds = 10 v, i d = 1.7 a 4.2 s p v ds = ? 5.0 v , i d = ? 2.0 a 3.1 charges, capacitances and gate resistance input capacitance c iss n f = 1.0 mhz, v gs = 0 v v ds = 10 v 271 pf p v ds = ? 10 v 531 output capacitance c oss n v ds = 10 v 72 p v ds = ? 10 v 91 reverse transfer capacitance c rss n v ds = 10 v 43 p v ds = ? 10 v 56 total gate charge q g(tot) n v gs = 4.5 v, v ds = 10 v, i d = 3.8 a 3.7 nc p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 2.0 a 5.5 threshold gate charge q g(th) n v gs = 4.5 v, v ds = 10 v, i d = 3.8 a 0.3 p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 2.0 a 0.7 gate ? to ? source charge q gs n v gs = 4.5 v, v ds = 10 v, i d = 3.8 a 0.6 p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 2.0 a 1.0 gate ? to ? drain charge q gd n v gs = 4.5 v, v ds = 10 v, i d = 3.8 a 1.0 p v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 2.0 a 1.4
ntljd3119c www. onsemi.com 4 electrical characteristics (t j = 25 c unless otherwise noted) parameter unit max typ min test conditions n/p symbol switching characteristics (note 6) turn ? on delay time t d(on) n v gs = 4.5 v, v dd = 16 v, i d = 1.0 a, r g = 2.0 3.8 ns rise time t r 4.7 turn ? off delay time t d(off) 11.1 fall time t f 5.8 turn ? on delay time t d(on) p v gs = ? 4.5 v, v dd = ? 10 v, i d = ? 2.0 a, r g = 2.0 5.2 rise time t r 13.2 turn ? off delay time t d(off) 13.7 fall time t f 19.1 drain ? source diode characteristics forward diode voltage v sd n v gs = 0 v, t j = 25 c i s = 1.0 a 0.69 1.0 v p i s = ? 1.0 a ? 0.75 ? 1.0 n v gs = 0 v, t j = 125 c i s = 1.0 a 0.52 p i s = ? 1.0 a ? 0.64 reverse recovery time t rr n v gs = 0 v, di s / dt = 100 a/ s i s = 1.0 a 10.2 ns p i s = ? 1.0 a 16.2 charge time t a n i s = 1.0 a 6.0 p i s = ? 1.0 a 10.6 discharge time t b n i s = 1.0 a 4.2 p i s = ? 1.0 a 5.6 reverse recovery charge q rr n i s = 1.0 a 3.0 nc p i s = ? 1.0 a 5.7 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
ntljd3119c www. onsemi.com 5 typical performance curves ? n ? channel (t j = 25 c unless otherwise noted) 212 10 4 v gs = 0 v t j = 100 c t j = 150 c 20 100 1000 10000 6 8 14 16 18 1 0.14 3 2 0.1 0 410 1.5 1.2 1.4 1.0 0.8 0.7 0 0.5 2 1 v ds , drain ? to ? source voltage (v) i d , drain current (amps) 0 v gs , gate ? to ? source voltage (v) figure 1. on ? region characteristics figure 2. transfer characteristics i d , drain current (amps) 1.0 0.07 5.0 2.0 0.05 0.04 0.03 6.0 figure 3. on ? resistance versus drain current v gs , gate ? to ? source voltage (v) figure 4. on ? resistance versus drain current and gate voltage i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) figure 5. on ? resistance variation with temperature t j , junction temperature ( c) figure 6. drain ? to ? source leakage current versus voltage v ds , drain ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance (normalized) i dss , leakage (na) 10 ? 50 50 25 0 ? 25 75 125 100 1 3 2 4 v ds 10 v t j = 25 c t j = ? 55 c t j = 100 c v gs = 1.8 v i d = 3.8 a v gs = 4.5 v 6 0.1 2 0 10 1.5 t j = 25 c v gs = 4 v to 2.2 v 1.8 v 4 8 4 0.06 0.08 t j = 25 c i d = 3.8 a 150 2.5 2.0 v 1.4 v 1.6 v 1.2 v t j = 25 c 0.12 0.06 0.02 0.04 v gs = 4.5 v v gs = 2.5 v 2 0.08 0.09 4.0 3.0 56789 1.3 1.1 0.9 1.5 2.5 3.5 6 8
ntljd3119c www. onsemi.com 6 typical performance curves ? n ? channel (t j = 25 c unless otherwise noted) 1 10 100 1 100 t r t d(off) t d(on) t f 10 v dd = 16 v i d = 1.0 a v gs = 4.5 v 5 5 15 20 gate ? to ? source or drain ? to ? source voltage (v) c, capacitance (pf) figure 7. capacitance variation 400 0 v gs v ds 300 100 010 v ds = 0 v t j = 25 c c oss c rss 500 600 c iss figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) t, time (ns) 2 0 0.4 v sd , source ? to ? drain voltage (v) i s , source current (amps) v gs = 0 v figure 10. diode forward voltage versus current 0.9 0.5 0.6 1 10 t j = 25 c v gs , gate-to-source voltage (volts) 0 3 0 q g , total gate charge (nc) 5 4 123 i d = 3.8 a t j = 25 c v gs q gs q gd qt 2 1 4 0 20 12 8 4 v ds , drain-to-source voltage (volts) v ds 16 200 v gs = 0 v 1.5 0.8 0.7 0.5
ntljd3119c www. onsemi.com 7 typical performance curves ? p ? channel (t j = 25 c unless otherwise noted) 12 0.15 5 1.4 1.6 1.2 0.8 0.6 10000 0 4.5 2 1 ? v ds , drain ? to ? source voltage (v) ? i d , drain current (amps) 0 ? v gs , gate ? to ? source voltage (v) figure 11. on ? region characteristics figure 12. transfer characteristics ? i d , drain current (amps) 1.0 2.0 1.5 figure 13. on ? resistance versus drain current ? i d , drain current (a) figure 14. on ? resistance versus drain current and gate voltage ? i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) figure 15. on ? resistance variation with temperature t j , junction temperature ( c) figure 16. drain ? to ? source leakage current versus voltage ? v ds , drain ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance (normalized) ? i dss , leakage (na) ? 50 50 25 0 ? 25 75 125 100 1 212 10 4 3 1 2 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c v gs = 0 v i d = ? 2.2 a v gs = ? 4.5 v 3 t j = 100 c t j = 150 c 2 0 1.5 t j = 25 c 20 v gs = ? 1.9 v to ? 6 v ? 1.5 v 3 1000 4 4 0 4 t j = 25 c 150 10 2.5 ? 1.4 v ? 1.3 v ? 1.2 v t j = 25 c v gs = ? 4.5 v t j = ? 55 c t j = 100 c 0 v gs = ? 4.5 v v gs = ? 2.5 v 6 8 14 16 18 2 0.5 2.5 3 5 3.5 ? 1.6 v ? 1.7 v 1 3 5 0.05 100 2.5 1.5 0.5 0.5 1.5 2.5 3.5 4.5 ? 1.8 v 0.1 0.05 0.1 0.04 0.07 0.06 0.08 0.09 4 1.0
ntljd3119c www. onsemi.com 8 typical performance curves ? p ? channel (t j = 25 c unless otherwise noted) 5 5 15 20 gate ? to ? source or drain ? to ? source voltage (v) c, capacitance (pf) figure 17. capacitance variation 800 0 v gs v ds 1000 400 010 v ds = 0 v t j = 25 c c oss c rss 1200 c iss figure 18. gate ? to ? source and drain ? to ? source voltage versus total charge figure 19. resistive switching time variation versus gate resistance r g , gate resistance ( ) 1 10 100 1000 1 t, time (ns) 100 t r t d(off) t d(on) t f 10 v dd = ? 15 v i d = ? 2.2 a v gs = ? 4.5 v 2.5 0 0 ? v sd , source ? to ? drain voltage (v) v gs = 0 v figure 20. diode forward voltage versus current 1.0 1 0.6 2 figure 21. maximum rated forward biased safe operating area t j = 25 c -v gs , gate-to-source voltage (volts) 0 3 0 q g , total gate charge (nc) 5 4 4 3 i d = ? 2.2 a t j = 25 c v gs q gs q gd qt 2 1 5 8 0 20 12 4 -v ds , drain-to-source voltage (volts) v ds 16 3 0.8 0.4 0.2 ? i s , source current (amps) 600 200 1.5 0.5 t j = 150 c 6 2 1 0.1 0.7 0.9 0.5 0.3 0.1 1 100 ? v ds , drain ? to ? source voltage (v) 1 100 r ds(on) limit thermal limit package limit 10 10 t c = 25 c t j = 150 c single pulse 1 ms 100 s 10 ms dc 10 s 0.1 0.01 ? i d , drain current (amps) *see note 2 on page 1 v gs = 0 v
ntljd3119c www. onsemi.com 9 typical performance curves (t j = 25 c unless otherwise noted) figure 22. thermal response t, time (s) 1 1000 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r ja (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 100 1000 10 0.1 0.001 0.0001 0.000001 0.1 100 10 1 0.01 0.00001 *see note 2 on page 1 effective transient thermal resistance
ntljd3119c www. onsemi.com 10 package dimensions notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip. 4. coplanarity applies to the exposed pad as well as the terminals. seating plane 0.10 c a3 a a1 0.10 c wdfn6 2x2, 0.65p case 506an issue g dim a min max millimeters 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 d 2.00 bsc d2 0.57 0.77 0.90 1.10 e 2.00 bsc 0.25 ref e2 e 0.65 bsc k 0.20 0.30 l 0.95 bsc f pin one reference 0.08 c 0.10 c note 4 a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 k 4 0.05 c d2 mounting footprint* bottom view soldermask defined dimensions: millimeters l1 detail a l optional constructions ?? ??? ??? --- 0.10 l1 a 0.10 cb a 0.10 cb 6x 0.45 2.30 1.10 0.82 2x 1.80 0.65 pitch 6x 0.39 1 package outline f d e *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntljd3119c/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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